| 标题 |
Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Yahui Feng; Hongxia Guo; Jinxin Zhang; Xiaoping Ouyang; Ruxue Bai; et al 出版日期:2025-04-23 |
| 求助人 | |
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(2025-6-4)