| 标题 |
Interface-driven faceted GaAs/Si(331) epitaxy: A reproducible growth route to lateral nanocorrugation and in-plane optical anisotropy |
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| DOI | |
| 其它 |
期刊:Materials Science in Semiconductor Processing 作者:R. Méndez-Camacho; E. Cruz-Hernández; E. H. Sánchez-Martínez; M. A. Zambrano-Serrano; E. A. Cerda-Méndez; et al 出版日期:2026-01-01 |
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(2025-6-4)