| 标题 |
Asymmetric trench SiC MOSFET with integrated channel accumulation diode for enhanced reverse conduction and switching characteristics |
| 网址 | |
| DOI | |
| 其它 |
期刊:Microelectronics Journal 作者:Sheng Gao; Xianfeng Zhang; Qi Wang; Shengqi Yu; Yang Zuo; et al 出版日期:2024-10-09 |
| 求助人 | |
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(2025-6-4)