| 标题 |
The aggregation phenomenon of impurity atoms in Si and the properties of C-doped Si studied by first-principle calculations |
| 网址 | |
| DOI | |
| 其它 |
期刊:Vacuum 作者:Jianing Wang; Zhihui Yue; Hao Lu; Jieshi Chen 出版日期:2022-11-01 |
| 求助人 | |
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(2025-6-4)