标题 |
专利、报告等 First Demonstration of Stacked 2T0C-DRAM Bit-Cell Constructed by Two-Layers of Vertical Channel-All-Around IGZO FETs Realizing 4F2 Area Cost
实现4F2面积成本的两层全沟道IGZO场效应晶体管堆叠式2T0C-DRAM位元首次演示
|
网址 | |
DOI |
暂未提供,该求助的时间将会延长,查看原因?
|
求助人 | |
下载 |