| 标题 |
Variation-aware analysis of buried-channel-array transistors (BCATs) in scaled DRAM: insights from 3D quasi-atomistic simulations |
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| DOI | |
| 其它 |
期刊:Semiconductor Science and Technology 作者:Seokchan Yoon; Jaehyuk Lim; Changhwan Shin 出版日期:2024-11-30 |
| 求助人 | |
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(2025-6-4)