| 标题 |
Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs |
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| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Z. H. Zaidi; K. B. Lee; J. W. Roberts; I. Guiney; H. Qian; et al 出版日期:2018-05-14 |
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(2025-6-4)