| 标题 |
Site-Selective Excitation of Defects Promotes Ultrafast Hot-Electron Transfer at the Semiconductor Interface |
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| DOI | |
| 其它 |
期刊:Journal of the American Chemical Society 作者:Tianjun Wang; Kaiping Wang; Huizhi Xie; Wei Chen; Yajie Gao; et al 出版日期:2026-02-10 |
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(2025-6-4)