| 标题 |
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Hongyu He; Yuan Liu; Binghui Yan; Xinnan Lin; Xueren Zheng; Shengdong Zhang 出版日期:2017-07-17 |
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(2025-6-4)