Stable photocurrent–voltage characteristics of perovskite single crystal detectors obtained by pulsed bias

Photocurrent–voltage characterization is a crucial method for assessing key parameters in x-ray or γ -ray semiconductor detectors, especially the carrier mobility lifetime product. However, the high biases during photocurrent measurements tend to cause severe ion migration, which can lead to the instability and inaccuracy of the test results. Given the mixed electronic–ionic characteristics, it is imperative to devise novel methods capable of precisely measuring photocurrent–voltage characteristics under high bias conditions, free from interference caused by ion migration. In this paper, pulsed bias is employed to explore the photocurrent–voltage characteristics of MAPbBr 3 single crystals. The method yields stable photocurrent–voltage characteristics at a pulsed bias of up to 30 V, proving to be effective in mitigating ion migration. Through fitting the modified Hecht equation, we determined the mobility lifetime products of 1.0 × 10 −2 cm 2 ⋅V −1 for hole and 2.78 × 10 −3 cm 2 ⋅V −1 for electron. This approach offers a promising solution for accurately measuring the transport properties of carriers in perovskite.