PREPARATION AND LUMINESCENT PROPERTIES OF LEAD-FREE HALIDE DOUBLE PEROVSKITE MATERIALS

卤化物 发光 钙钛矿(结构) 铅(地质) 材料科学 化学工程 无机化学 化学 光电子学 结晶学 地质学 地貌学 工程类
作者
敬小龙 JING Xiao-long,Tianchun Lang,Tatiana G. Cherkasova,Tao Han
出处
期刊:Izvestiâ vysših učebnyh zavedenij [Ivanovo State University of Chemistry and Technology]
卷期号:68 (4): 67-72
标识
DOI:10.6060/ivkkt.20256804.7164
摘要

Halide perovskite APbX3 (A = CH3NH3+, Cs+; X is a halogen ion) has been proved by scholars to be a material with great potential in photovoltaic and optoelectronic applications due to its charge transport characteristics, narrow-band emission, adjustable emission wavelength and high carrier mobility. However, due to adverse factors such as toxicity and easy decomposition of lead halide perovskite materials, its future development and research application are limited. In order to overcome the toxicity and easy decomposition of halide perovskite, this paper prepared Cs2NaBiCl6:x%Mn2+ (x = 0, 1, 3, 6, 9) by precipitation method. Na+ and Bi3+ ions are substituted two Pb2+ ions, and the lead-free halide double perovskite (Cs2NaBiCl6) matrix was prepared and doped with Mn2+. The effects of different Mn2+ doping concentrations on its luminescence properties were studied. The results showed that the prepared sample was relatively pure and there were no other hetero-phase. When the doping concentration of Mn2+ reaches 6%, the luminescence intensity is the highest. Different excitation wavelengths (340 nm, 363 nm, 380 nm) and emission wavelengths (560 nm, 582 nm, 600 nm) were used to measure the emission state and excited state of the sample, which showed that the prepared sample was the same emission source. The calculated color coordinates are (0.5288, 0.4665), belonging to the orange-yellow region. Finally, the inorganic halide double perovskite material with great development prospect was obtained. For citation: Jing Xiaolong, Lang Tianchun, Cherkasova T.G., Han Tao Preparation and luminescent properties of lead-free halide double perovskite materials. ChemChemTech [Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol.]. 2025. V. 68. N 4. P. 67-72. DOI: 10.6060/ivkkt.20256804.7164.

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