碳纳米管场效应晶体管
功率(物理)
计算机科学
电气工程
工程类
物理
晶体管
电压
量子力学
场效应晶体管
作者
Imran Ahmed Khan,Owais Ahmad Shah,Durgesh Nandan,Amrita Rai,Anurag Mahajan
标识
DOI:10.2174/0123520965358804241209095031
摘要
Background: Reducing power consumption in digital circuits can be achieved by minimizing the number of transitions, and Gray code provides a binary numeral system optimized for this purpose. Traditional CMOS-based counters face limitations in power efficiency and performance at nanoscale levels. This research presents a novel design of a Gray code counter utilizing Carbon Nanotube Field-Effect Transistors (CNTFETs) as a high-performance alternative to CMOS technology. Methods: The CNTFET-based Gray code counter was evaluated across a range of temperatures (25°C to 100°C), input voltages (0.7V to 1.3V), and clock frequencies (200 MHz to 800 MHz). Supervised machine learning was employed to predict and analyze key performance metrics, including propagation delay, power consumption, and Power-Delay Product (PDP), for both CMOS and CNTFET Gray code counters under varying conditions. Results: The results demonstrate that the CNTFET-based Gray code counter exhibits significantly lower power dissipation, faster operation, and a minimum PDP compared to its CMOS counterpart across the tested temperature, voltage, and frequency variations. The machine learning predictions aligned closely with simulation results, confirming the accuracy of this approach in optimizing the design. Conclusion: The study validates the CNTFET Gray code counter as a highly efficient, low-power solution suited for high-performance applications. Its superior performance characteristics suggest that CNTFET technology, coupled with AI-driven optimization, holds promise for advanced lowpower VLSI circuit designs.
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