Revealing Interactions between Hole-Transporting Layers and Perovskite Quantum Dots for Electroluminescence

电致发光 量子点 钙钛矿(结构) 材料科学 光电子学 发光二极管 工程物理 凝聚态物理 纳米技术 物理 化学 结晶学 图层(电子)
作者
Xinyi Lyu,Meiyi Zhu,Hongjin Li,Qiuting Cai,Yun Gao,Yifeng Feng,Haiping He,Jinquan Chen,Xingliang Dai,Zhizhen Ye
出处
期刊:ACS applied nano materials [American Chemical Society]
卷期号:7 (7): 7421-7429 被引量:2
标识
DOI:10.1021/acsanm.4c00122
摘要

Perovskite quantum dots (PeQDs) are promising nanoscale emitters in a generation of high-performance, large-area, and low-cost light-emitting diodes (LEDs) due to their superior emissive properties and excellent solution processability. Despite the tremendous advancement in luminescence efficiency in PeQDs, the design principle of the hole-transporting layer for PeQDs-based LEDs is still limited. Here, we investigate the discrepancy in electroluminescence properties of PeQDs-based LEDs with two widely used hole-transporting layers, namely, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) and poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine) (TFB). The results show that the TFB-based PeQD-LEDs exhibit much inferior performance than the PTAA-based device (7% vs 18% for external quantum efficiency) although the PeQDs show better optical properties when depositing on TFB hole-transporting layers. Theoretical calculation and comprehensive spectroscopic analysis indicate a weaker interaction between PeQDs and TFB polymers, which is attributed to the larger steric hindrance of TFB than that of PTAA. As a result, electrical characterizations identify a poor hole injection efficiency from the TFB to the PeQDs emissive layer when compared with the PTAA hole-transporting layers, thus leading to poor device performance. This work reveals the interaction between the hole-transporting layer and PeQDs on the performance of electroluminescence beyond the energy level and mobility of hole-transporting materials, which promotes an understanding of the hole injection mechanism in PeQDs-based LEDs.
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