Impact of band gap and gate dielectric engineering on novel Si0.1Ge0.9-GaAs lateral N-type charge plasma based JLTFET

In this research article, a device called dual dielectric gate hetero-material junctionless TFET (DD-HJLTFET) is proposed using a novel amalgamation of Si0.1Ge0.9/GaAs for the first time and investigated by a Silvaco -ATLAS simulator 5.26.1.R version. This device utilizes a Si1-xGex (x = 0.9) at the source and GaAs at the drain and channel, along with dual dielectric materials (HfO2, SiO2) at the gates. Its electrical performance has improved significantly compared to the latest published literature results on TFET and traditional Si-JLTFET. Simulation results show that DD-HJLTFET provides superior performance in terms of analog/RF, linearity, and intermodulation distortion FOMs as ION (32100%↑), SS (66%↓), gm (20233%↑), TGF (324.7 times↑), Av (199.3%↑), Cgg (171%↓), fT (557.41 times↑), GBP (560.6 times↑), and various signal performance parameters such as VIP2 (116.3%↑), IIP3 (40.5%↑), 1-dB compression point (9.6%↑) compared to Si-JLTFET. Therefore, the DD-HJLTFET device proposed in this article can be suitable for high-frequency and low-power applications.