Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

Four-layer hexagonal silicon carbide (4H-SiC) is a promising material for high-temperature and radiation-rich environments due to its excellent thermal conductivity and radiation resistance. Shockley-type stacking faults serve as one of the factors influencing the radiation resistance of 4H-SiC.