Reducing Reverse Recovery Charge in Trench Power MOSFETs Using Platinum Traps Introduced by Implantation and PVD

Trench power MOSFETs are widely used across consumer, automotive and industrial market segments for many applications. During switching, the reverse recovery charge (Qrr) associated with the body diode of the MOSFET, gives rise to spiking, ringing and efficiency losses. In this study, minority carrier lifetime reduction/killing using Platinum (Pt) in trench power MOSFETs is demonstrated in terms of Qrr reduction. Further, reduced Qrr levels due to the presence of Pt traps, created by two different methods are compared, i) by ion implantation (Pt IMP) and ii) by physical vapor deposition (Pt PVD).