材料科学
X射线光电子能谱
空位缺陷
分析化学(期刊)
费米能级
兴奋剂
价(化学)
电化学
带隙
氧气
晶格常数
结合能
物理化学
电子
结晶学
原子物理学
化学工程
化学
物理
电极
光电子学
工程类
有机化学
光学
量子力学
色谱法
衍射
作者
Zu-Yin Deng,Utkarsh Kumar,Chia-Hsin Ke,Chang‐Yu Lin,Huang We,Chau-Chung Wu
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2022-12-01
卷期号:34 (7): 075704-075704
被引量:6
标识
DOI:10.1088/1361-6528/aca2b1
摘要
Abstract In this work, a simple electrochemical oxidation method has been used to prepare p-type β -Ga 2 O 3 nanoparticles. This method overcomes the problem of doping high energy gap semiconductors to form p-type. The electron holes of β -Ga 2 O 3 were caused by oxygen vacancy (Vo) and showed the shorter lattice constant and preferred orientation in XRD analysis. The peak area of oxygen vacancy also reflects a higher ratio than n-type Ga 2 O 3 in x-ray photoelectron spectroscopy (XPS). The adsorption of reducing gas (CO, CH 4 , and H 2 ) enhanced the resistance of the β -Ga 2 O 3 confirming the p-type character of NPs. The DFT calculations showed that oxygen vacancy leads to higher energy of the Fermi level and is near the valence band. The binding energy of Ga 2 O 3 and after interaction with gas molecular was also calculated which is analogous to our experimental data.
科研通智能强力驱动
Strongly Powered by AbleSci AI