High performance solar-blind deep ultraviolet photodetectors via β-phase (In0.09Ga0.91)2O3 single crystalline film

We successfully fabricate a high performance β -phase (In 0.09 Ga 0.91 ) 2 O 3 single-crystalline film deep ultraviolet (DUV) solar-blind photodetector. The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy (PA-MBE). The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector, which utilized an interdigitated Ti/Au electrode with a metal–semiconductor–metal structure. The device exhibits a low dark current of 40 pA (0 V), while its UV photon responsivity exceeds 450 A/W (50 V) at the peak wavelength of 232 nm with illumination intensity of 0.21 mW/cm 2 and the UV/VIS rejection ratio ( R 232 nm / R 380 nm ) exceeds 4 × 10 4 . Furthermore, the devices demonstrate ultrafast transient characteristics for DUV signals, with fast-rising and fast-falling times of 80 ns and 420 ns, respectively. This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga 2 O 3 alloys to enhance the performance of InGaO solar-blind detectors. Additionally, a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system. Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.