Advances in multilayer graphene processes for metallization and high-frequency devices

Abstract Multilayer graphene (MLG) has been proposed as an alternative material for nanometer-wide interconnects. However, it has not been put to practical use, since the process technology that leads to practical use has been immature. Recent advances in MLG processes and applications, such as MLG-capped copper interconnects, the direct deposition of MLG by solid-phase deposition (SPD) at a low temperature, stable intercalation doping to MLG and selective chemical vapor deposition (CVD) of high-crystallinity MLG for inductor and antenna applications are reviewed. Based on these advances, MLG is considered to be approaching the stage of practical application for device metallization and high-frequency devices. Based on the characteristics of MLG as a conductor and recent development trends, the prospects and issues regarding the future practical use of MLG graphene are discussed.