Monolithic integrated InxGa1−xAs Schottky-barrier waveguide photodetector

InxGa1−xAs Schottky-barrier diodes for detection in the 0.9–1.06-μm wavelength range have been incorporated in high-purity GaAs planar waveguides using a selective epitaxial growth process. A quantum efficiency of 60% at 1.06 μm has been obtained for these detectors, and current gain has been observed.