Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers

Frank-type defects on the basal plane in thick 4H–SiC epitaxial layers have been characterized by photoluminescence (PL) spectroscopy and a PL imaging microscopy. The PL emission wavelength of the three kinds of Frank-type defects were determined at ∼424, 457, and 488 nm at room temperature, respectively. The high-resolution PL imaging of the defects was obtained, and the PL emission at the Frank partial dislocations was confirmed in the near infrared region (>700 nm). Correspondence between the optical properties and the microscopic structures of the defects was clarified.