材料科学
薄膜
锌
基质(水族馆)
图层(电子)
纹理(宇宙学)
原子层沉积
沉积(地质)
化学气相沉积
化学工程
燃烧化学气相沉积
纳米技术
纳米线
碳膜
冶金
古生物学
海洋学
图像(数学)
人工智能
沉积物
计算机科学
工程类
生物
地质学
作者
Swee–Yong Pung,Kwang‐Leong Choy,Xianghui Hou,Chongxin Shan
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2008-09-22
卷期号:19 (43): 435609-435609
被引量:193
标识
DOI:10.1088/0957-4484/19/43/435609
摘要
Preferred orientation of ZnO thin films deposited by the atomic layer deposition (ALD) technique could be manipulated by deposition temperature. In this work, diethyl zinc (DEZn) and deionized water (H2O) were used as a zinc source and oxygen source, respectively. The results demonstrated that (10.0) dominant ZnO thin films were grown in the temperature range of 155–220 °C. The c-axis crystal growth of these films was greatly suppressed. Adhesion of anions (such as fragments of an ethyl group) on the (00.2) polar surface of the ZnO thin film was believed to be responsible for this suppression. In contrast, (00.2) dominant ZnO thin films were obtained between 220 and 300 °C. The preferred orientations of (10.0) and (00.2) of the ZnO thin films were examined by XRD texture analysis. The texture analysis results agreed well with the alignments of ZnO nanowires (NWs) which were grown from these ZnO thin films. In this case, the nanosized crystals of ZnO thin films acted as seeds for the growth of ZnO nanowires (NWs) by chemical vapor deposition (CVD) process. The highly (00.2) textured ZnO thin films deposited at high temperatures, such as 280 °C, contained polycrystals with the c axis perpendicular to the substrate surface and provided a good template for the growth of vertically aligned ZnO NWs.
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