共栅
放大器
功率增加效率
阻抗匹配
电气工程
电子工程
史密斯图表
射频功率放大器
电阻抗
工程类
CMOS芯片
作者
Priya Puja,Kaur Gurjit,Kumar Rajesh
出处
期刊:Energy Conversion Congress and Exposition
日期:2021-05-24
卷期号:: 975-977
被引量:1
标识
DOI:10.1109/ecce-asia49820.2021.9479170
摘要
This paper presents a high gain and high- efficiency dual band Cascode class-F power amplifier (PA) for Ka- band applications using 0.25μm GaN technology. Cascode Class-F PA is combined with a non-uniform step impedance transmission line and magic tee (MTEE) to illustrate a second harmonic balance matching technique. A second harmonic balance matching technique utilized to enhance the gain up to 30dB at the saturation power region. This technique also enhances the resonant circuits band properties. Magic tee helps to enhance an internal matching design. For maximum output power, drain efficiency, and PAE the fundamental and second harmonic impedances are to be accurately improved for the particular operating frequency. Measured results represent maximum output power of 45.1dBm, drain efficiency of 87% and power added efficiency (PAE) of 73.4%. The fundamental and second harmonic balance levels are adjusted at -21dBc to - 16dBc. The simulated and the measured results of the proposed power amplifier show the right constancy.
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