记忆电阻器
材料科学
织物
纱线
纤维
纳米技术
纳米
数码产品
电子工程
电气工程
复合材料
工程类
作者
Yue Liu,Xufeng Zhou,Hui Yan,Zhengfeng Zhu,Xiang Shi,Yahui Peng,Lin Chen,Peining Chen,Huisheng Peng
标识
DOI:10.1002/adfm.202201510
摘要
Abstract Memristors with an intrinsic crossbar structure and high computing capability offer promising opportunities for the flexible information‐processing component that can well integrate with the interwoven structure of electronic textiles. However, it remains difficult to achieve uniform inorganic memristive layer at nanometer thickness on the curved surface of fiber electrode, thus hindering the applications of textile memristors. Here, a high‐performing and reliable textile memristor made of robust Pt/CsPbBr 3 fiber through an electric‐field‐assisted assembly method is reported. The textile memristor exhibits a cycle to cycle variation of less than 8% and an average set voltage of ≈ 0.16 V, which is lower than that of the majority of planar metal‐oxide memristors. The flexible and mechanically robust Pt/CsPbBr 3 fibers are woven into a scalable textile memristor array with good device‐to‐device reproducibility. This textile memristor can be seamlessly integrated with textile electronics toward a smart clothes system to accurately process complicated physiological information, providing an effective interactive interface for intelligent healthcare.
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