半导体
晶体管
材料科学
光电子学
半导体材料
场效应晶体管
领域(数学)
工程物理
凝聚态物理
电气工程
工程类
物理
数学
电压
纯数学
作者
Keshari Nandan,Bahniman Ghosh,Amit Agarwal,Somnath Bhowmick,Yogesh Singh Chauhan
标识
DOI:10.1109/ted.2021.3130834
摘要
We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using the first principles quantum transport simulations. The devices’ performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising 2-D materials-based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them is encouraging, and competitive to other logic alternatives.
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