Novel Amorphous-Silicon-Based Double-Metal Antifuse with Barrier Enhancement Layer

The electrical characteristics, operating mechanism and reliability of a novel amorphous-silicon-based double-metal antifuse are reported in detail. A very thin α- S i C : H layer was inserted on both top and bottom A l /α- S i : H interfaces as barrier enhancement layer. With proper adjustment of the thickness of this layer, the programming voltage and leakage current can be controlled. The antifuse offers very low on-resistance (<2 Ω) and low preparation temperature (<250° C), and the characteristics are independent of area, therefore, the device is suitable for integration with field-programmable gate array applications.