纳米激光器
绝缘体上的硅
材料科学
光电子学
波导管
激光器
光学
硅
硅光子学
光子学
联轴节(管道)
光子晶体
波长
激光阈值
物理
冶金
作者
Jungmin Lee,Indra Karnadi,Jin Tae Kim,Yong-Hee Lee,Myung‐Ki Kim
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2017-08-07
卷期号:4 (9): 2117-2123
被引量:48
标识
DOI:10.1021/acsphotonics.7b00488
摘要
We propose and demonstrate a direct integration of a wavelength-scale III–V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III–V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III–V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III–V and SOI waveguides overlap at the optimal length of 3.2 μm, 88% of the light from the printed III–V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.
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