Effective Carrier‐Concentration Tuning of SnO2 Quantum Dot Electron‐Selective Layers for High‐Performance Planar Perovskite Solar Cells

Abstract The carrier concentration of the electron‐selective layer (ESL) and hole‐selective layer can significantly affect the performance of organic–inorganic lead halide perovskite solar cells (PSCs). Herein, a facile yet effective two‐step method, i.e., room‐temperature colloidal synthesis and low‐temperature removal of additive (thiourea), to control the carrier concentration of SnO 2 quantum dot (QD) ESLs to achieve high‐performance PSCs is developed. By optimizing the electron density of SnO 2 QD ESLs, a champion stabilized power output of 20.32% for the planar PSCs using triple cation perovskite absorber and 19.73% for those using CH 3 NH 3 PbI 3 absorber is achieved. The superior uniformity of low‐temperature processed SnO 2 QD ESLs also enables the fabrication of ≈19% efficiency PSCs with an aperture area of 1.0 cm 2 and 16.97% efficiency flexible device. The results demonstrate the promise of carrier‐concentration‐controlled SnO 2 QD ESLs for fabricating stable, efficient, reproducible, large‐scale, and flexible planar PSCs.