Interpolation-Based Switching and Conduction Losses Model of GaN Transistors

Gallium nitride (GaN) transistors have demonstrated their potential as a high switching frequency, high power density, and high-efficiency power device. There has been substantial research undertaken on the switching and conduction losses calculation, where most studies have calculated them using an analytical approach. This paper presents an interpolation-based method to calculate switching and conduction losses. This interpolation method employs a combination of the GaN transistor and driving parameters such as parasitic capacitances, parasitic inductances, gate resistors, drain-to-source voltage, instantaneous current, and temperature. A value for switching loss is considered as a base value and the different combinations of circuits will be reached by using interpolated equations. The second aim of this study is to investigate the temperature-dependency of the ON state resistance: two values at different temperatures are considered and ON resistance will be obtained by linear interpolation. Finally, the accuracy of the proposed model is validated by using some scenarios on LTSPICE simulations.