High-performance near-infrared Schottky-photodetector based graphene/In2S3 van der Waals heterostructures

The photodetectors based on graphene/In₂S₃ van der Waals heterostructures through junction carrier separation exhibited an excellent infrared performance of high photoresponsivity of 0.49 mA W⁻¹, external quantum efficiency of 0.07%, and detectivity of 3.05 × 10⁷ jones using an 808 nm laser.