In-situ Microwave Characterization of Medium-k HfO2 and High-k STO Dielectrics for MIM Capacitors Integrated in Back-End of Line of IC

The complex permittivity microwave characterization of medium-k materials as HfO2 and high-k materials as STO is presented. The characterization method, using coplanar or microstrip waveguides, allows a large band characterization, from 40 MHz to 40 GHz. It also allows investigating these materials with large scale thickness, from 10 nm up to 500 nm, in a configuration which can be very close to their final integration in an advanced damascene architecture of MIM capacitor. We show that the permittivity of such materials can be process and frequency-dependent.