Enhanced photocatalytic properties of Ge-doped Ga2O3 nanostructures synthesized via hydrothermal method

Abstract Ge-doped (1.4 at. %) β -Ga 2 O 3 nanostructures are successfully synthesized using the hydrothermal method followed by annealing at 1000 °C in an O 2 atmosphere. The crystal structures and morphologies of both intrinsic and Ge-doped β -Ga 2 O 3 nanostructures are analyzed using high-resolution x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscope, and energy dispersive spectroscopy. Photoluminescence measurements are also performed to investigate defect-related energy levels within the bandgap. The photocatalytic activity is evaluated through the degradation of methylene blue in an aqueous solution. Ge-based precipitates form when the Ge concentration exceeds 1.4 atomic percent in the β -Ga 2 O 3 nanostructures. As with other dopants such as Sn, Al, and Cr, this controlled incorporation of Ge significantly enhances the photocatalytic properties and potentially improves the electronic and optical properties of Ga 2 O 3 -based devices.