Enhanced photocatalytic properties of Ge-doped Ga2O3 nanostructures synthesized via hydrothermal method

Abstract Ge-doped (1.4 at. %) β-Ga2O3 nanostructures are successfully synthesized using the hydrothermal method followed by annealing at 1000°C in an O₂ atmosphere. The crystal structures and morphologies of both intrinsic and Ge-doped β-Ga2O3 nanostructures are analyzed using high-resolution X-ray diffraction (HR-XRD), field-emission scanning electron microscopy (FE-SEM), Transmission Electron Microscope (TEM), and energy dispersive spectroscopy (EDS). Photoluminescence (PL) measurements are also performed to investigate defect-related energy levels within the bandgap. The photocatalytic activity is evaluated through the degradation of methylene blue (MB) in an aqueous solution. Ge-based precipitates form when the Ge concentration exceeds 1.4 atomic percent in the β-Ga2O3 nanostructures. As with other dopants such as Sn, Al, and Cr, this controlled incorporation of Ge significantly enhances the photocatalytic properties and potentially improves the electronic and optical properties of Ga2O3-based devices.