半导体
降级(电信)
半导体器件
功率(物理)
电压
材料科学
使用寿命
功率半导体器件
硫化氢
氢
高压
电气工程
加速度
工程物理
光电子学
可靠性工程
工程类
纳米技术
化学
冶金
物理
量子力学
有机化学
硫黄
图层(电子)
经典力学
作者
Michael Hanf,J.-H. Peters,Sven Clausner,Nando Kaminski
标识
DOI:10.1016/j.microrel.2022.114622
摘要
In some applications or environments, power semiconductor devices are exposed to hydrogen sulphide (H2S). The degradation mechanisms triggered under these circumstances have been reported already, but the degradation dynamics, the acceleration factors and the impact on the service life of the affected devices are not yet fully understood. There are no standard test methods available for power semiconductor devices and therefore, a test campaign with highly corrosive climatic conditions was started to investigate the degradation mechanisms under high voltage.
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