荧光粉
色度
显色指数
激发态
热稳定性
紫外线
色温
量子效率
光电子学
发光二极管
材料科学
二极管
LED灯
光致发光
化学
光学
物理
有机化学
核物理学
作者
Hao Bai,Guangdong Wu,Qing Qing,Jiayi Hou,Jiahui Liu,Fang Song,Zuobin Tang,Zhihua Leng
标识
DOI:10.1016/j.jlumin.2022.119346
摘要
The widespread popularity of white light-emitting diodes (WLED) lighting results in a chronic exposure to blue light, which has negative impacts on human biological functions, emotions and health. As an alternative strategy, integrating near-ultraviolet (n-UV) LED chips with high-efficiency (high quantum efficiency, chemical and thermal stability) tricolor phosphors, can easily achieve high-quality white light and diminish the so-called "blue-light hazard". However, few blue-emitting phosphors can meet the aforementioned requirements. Herein, we report a novel n-UV excited bright blue-emitting CsBaB9O15:2%Eu2+ phosphor with high internal quantum efficiency (IQE = 68.8%) and outstanding thermal stability (94.2%@ 150 °C, 84%@ 250 °C). Impressively, this phosphor exhibits excellent chromaticity stability (Δx = 0.002, Δy = 0.012; 3.6 × 10−3 ≤ ΔE ≤ 8.1 × 10−3) from 25 to 150 °C. These remarkable thermal stability are mainly ascribed to the large band gap of host (Eg = 5.85 eV), which effectively suppresses the thermal ionization pathway of the dominant 440 nm emission in the CsBaB9O15:2%Eu2+ phosphor. A WLED device was fabricated by combining commercial phosphor Sr2Si5N8:Eu2+, green phosphor (Sr, Ba)2SiO4:Eu2+ and as-synthesized blue phosphor with a 380 nm n-UV LED chip, which exhibits high color-rendering index (CRI = 90) and low correlated color temperature (CCT = 3301 K). These results demonstrate that the outstanding CsBaB9O15:Eu2+ blue phosphor could be a candidate for next-generation healthy WLED lighting.
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