GaN-Djoser Pyramidal Self Powered UV Photodetector for Optical Signal Detection in Rugged Environments

Wireless communication under harsh environment using ultraviolet radiation remains a vital field of research. We have reported the novel GaN pyramids of Djoser ultraviolet photodetector operable at high-temperature conditions. The GaN-pyramids of Djoser ultraviolet photodetector display extremely high performance, detect weak optical signals and display self-powered behavior even under challenging conditions. GaN-pyramids of Djoser was grown via modulating flux ratio (Ga/N) in molecular beam epitaxy. Two-terminal asymmetric Pt electrodes metal semiconductor metal-ultraviolet photodetector were fabricated for better thermal stability and low dark current. The device exhibits high responsivity of 11.1 × 103 mAW−1 at RT and 5.6 × 103 mAW−1 at 250 °C with a fast response time of ∼ 200 µs in self-power mode. In photoconductive mode, the device demonstrates very high responsivity ∼ 2.5 × 107 mAW−1, high detectivity (1012 Jones) at a weak optical signal, while the device shows very high responsivity ∼1 × 107 mAW−1 at 250 °C. The extraordinary performance of the device is attributed to its unique Djoser-pyramidal structure with decreased surface stress and dislocations. The self-powered device with significantly high responsivity and capability to detect weak optical signals demonstrates the feasibility of a highly efficient photoreceiver design of GaN- pyramids of Djoser for ultraviolet communication, which can work under harsh environmental conditions.