The fabrication of GaAs nanocolumn arrays by nanospheres gas-liquid interface self-assembly method and ICP

A single layer of tightly arranged silicon oxide nanospheres was formed on GaAs substrate by gas-liquid interface self-assembly method. The silicon oxide nanospheres were used as the etching barrier layer, and the GaAs nanocolumn array was prepared by dry etching with Inductively Coupled Plasma (ICP) of SiCl4/Ar gas. The results show that the morphology of GaAs nanocolumns can be optimized by controlling the technological conditions in the preparation process, such as reaction gas flow, sample chamber pressure and RF power. The optimal technological parameters are obtained, and the GaAs nanocolumn arrays with smooth and steep sidewalls are prepared.