材料科学
载流子
半导体
硫系化合物
电子迁移率
化学物理
纳米技术
退火(玻璃)
光电子学
电荷(物理)
纳米晶
载流子寿命
兴奋剂
凝聚态物理
硅
化学
物理
量子力学
复合材料
作者
Marcello Righetto,Yongjie Wang,Karim A. Elmestekawy,Chelsea Q. Xia,Michael B. Johnston,Gerasimos Konstantatos,Laura M. Herz
标识
DOI:10.1002/adma.202305009
摘要
Efficient charge-carrier transport is critical to the success of emergent semiconductors in photovoltaic applications. So far, disorder has been considered detrimental for charge-carrier transport, lowering mobilities, and causing fast recombination. This work demonstrates that, when properly engineered, cation disorder in a multinary chalcogenide semiconductor can considerably enhance the charge-carrier mobility and extend the charge-carrier lifetime. Here, the properties of AgBiS2 nanocrystals (NCs) are explored as a function of Ag and Bi cation-ordering, which can be modified via thermal-annealing. Local Ag-rich and Bi-rich domains formed during hot-injection synthesis are transformed to induce homogeneous disorder (random Ag-Bi distribution). Such cation-disorder engineering results in a sixfold increase in the charge-carrier mobility, reaching ≈2.7 cm2 V-1 s-1 in AgBiS2 NC thin films. It is further demonstrated that homogeneous cation disorder reduces charge-carrier localization, a hallmark of charge-carrier transport recently observed in silver-bismuth semiconductors. This work proposes that cation-disorder engineering flattens the disordered electronic landscape, removing tail states that would otherwise exacerbate Anderson localization of small polaronic states. Together, these findings unravel how cation-disorder engineering in multinary semiconductors can enhance the efficiency of renewable energy applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI