光电探测器
响应度
钙钛矿(结构)
光电子学
探测器
材料科学
暗电流
衰减系数
吸收(声学)
电子迁移率
载流子寿命
红外线的
光学
物理
硅
化学
结晶学
复合材料
作者
Antoni Rogalski,Weida Hu,Fang Wang,Yang Wang,Piotr Martyniuk
出处
期刊:Materials
[Multidisciplinary Digital Publishing Institute]
日期:2024-08-13
卷期号:17 (16): 4029-4029
被引量:9
摘要
Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their relative simplicity, high-efficiency processing and low production cost. Significant improvement has been made in the detection performance and the photodetectors' design, especially operating in the visible (VIS) and near-infrared (NIR) regions. This paper attempts to determine the importance of those devices in the broad group of standard VIS and NIR detectors. The paper evaluates the most important parameters of perovskite detectors, including current responsivity (
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