Wafer-scale characterization for two-dimensional material layers

Abstract Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology techniques being intensively used to characterize 2D materials on small coupons, the development of in-line and routine characterization of 2D material monolayers grown on 300 mm wafers remains in its early stages. In this work, we evaluate and combine different in-line metrologies to characterize the thickness and morphology of tungsten disulfide (WS2) monolayers at the 300 mm wafer level. By combining complementary metrology techniques, we reveal the morphology of WS2, the WS2 layer thickness and within-wafer uniformity for different WS2 deposition conditions across 300 mm wafers.