碲化镉光电
助推器(火箭)
材料科学
光电子学
太阳能电池
电流密度
开路电压
异质结
短路
薄膜
电流(流体)
兴奋剂
能量转换效率
光伏系统
图层(电子)
碲化物
电压
纳米技术
电气工程
物理
冶金
量子力学
天文
工程类
作者
Md Sabbir-Bin Hossain,Md. Alamin Hossain Pappu,Bipanko Kumar Mondal,Ahnaf Tahmid Abir,Jaker Hossain
标识
DOI:10.1002/ente.202400383
摘要
CdTe‐based thin film solar cell has been modeled and enumerated with a thin CuInTe 2 (CIT) current booster layer. CdTe‐based n‐CdS/p‐CdTe/p + ‐CIT/p ++ ‐WSe 2 heterojunction device is evaluated for the highest performance. It is revealed that physical parameters such as thickness, doping, and defects of the CIT layer have a significant influence on the performance of the CdTe solar cell. The device shows an efficiency of 37.46% with an open‐circuit voltage, V OC , of 1.102 V, short‐circuit current density, J SC , of 38.50 mA cm −2 , and fill factor, FF, of 88.30%. The use of the photon recycling technique with a Bragg reflector with 98% back and 95% front reflectance only provides an efficiency of ≈44.3% with a current of 45.4 mA cm −2 . These findings are very hopeful for the production of efficient CdTe solar cells in the near future.
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