材料科学
电子
化学工程
化学物理
纳米技术
化学
物理
量子力学
工程类
作者
Kyunghun Lyu,Jiyoung Park,Hyun Jae Lee,Woongkyu Lee
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2025-01-01
卷期号:17 (23): 14118-14124
被引量:1
摘要
2D electron gas (2DEG) was formed at Al 2 O 3 (AO)/In 2 O 3 (IO) and IO/AO interfaces. Conventional reductive-precursor-driven 2DEG was generated at AO/IO, while material-driven 2DEG was developed at IO/AO, unaffected by fabrication process.
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