Lv31
300 积分 2024-12-04 加入
Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs
2小时前
待确认
High-performance AlN/GaN/AlGaN-MOSHEMTs on SiC wafer: scaling and gate material innovations for upcoming radar and communication systems
6天前
已完结
Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs
6天前
已完结
Impact of Gate Metals/High-K Materials and Lateral Scaling on the Performance of AlN/GaN/AlGaN-MOSHEMT on SiC Wafer for Future Microwave Power Amplifiers in RADAR & Communication Systems
14天前
已完结
Recent advances in GaN-based semiconductor lasers
18天前
已完结
Tracking the Effect of Adatom Electronegativity on Systematically Modified AlGaN/GaN Schottky Interfaces
19天前
已完结
Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation
19天前
已完结
Impact of Ga overpressure on the metal modulation epitaxy growth of AlN/AlGaN short period superlattices
21天前
已关闭
Si/AlN p-n heterojunction interfaced with ultrathin SiO2
21天前
已关闭
Regrowth and Selective Area Growth of GaN for Vertical Power Electronics
26天前
已关闭
皖公网安备34019202002308
