响应度
锗
光电探测器
光电子学
材料科学
锗化合物
光学
物理
硅
作者
Xu Wang,Jinwen Song,Fengxin Yu,Fenghe Yang,Wei Chu,Haibin Zhao,Haiwen Cai,Xuezhe Zheng,Hao Wu,Xiao Hu
标识
DOI:10.1364/ofc.2025.m4k.2
摘要
We demonstrate lateral-PIN germanium photodetectors with high bandwidth of up to 100 GHz, >0.8 A/W responsivity in the C-band and <20 nA dark current by utilizing ultra-thin germanium technology on CMOS silicon-photonic platform.
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