材料科学
超短脉冲
计算机数据存储
光电子学
数码产品
纳米技术
非易失性存储器
异质结
和大门
逻辑门
计算机科学
计算机硬件
电气工程
光学
激光器
工程类
物理
算法
作者
Hao Wang,Hui Guo,Roger Guzmán,Nuertai JiaziLa,Kang Wu,Aiwei Wang,Xionghua Liu,Lingzhi Liu,Liangmei Wu,Jiancui Chen,Qing Huan,Wu Zhou,Yang Hu,Sokrates T. Pantelides,Lihong Bao,Hong‐Jun Gao
标识
DOI:10.1002/adma.202311652
摘要
Abstract The explosive growth of massive‐data storage and the demand for ultrafast data processing require innovative memory devices with exceptional performance. Two‐dimensional (2D) materials and their van der Waal heterostructures with atomically sharp interfaces hold great promise for innovations in memory devices. Here, we present non‐volatile, floating‐gate memory devices with all functional layers made of 2D materials, achieving ultrafast programming/erasing speeds (20 ns), high extinction ratios (up to 10 8 ), and multi‐bit storage capability. These devices also exhibit long‐term data retention exceeding 10 years, facilitated by a high gate‐coupling ratio (GCR) and atomically sharp interfaces between functional layers. Additionally, we demonstrate the realization of an “OR” logic gate on a single‐device unit by synergistic electrical and optical operations. The present results provide a solid foundation for next‐generation ultrahigh‐speed, ultralong lifespan, non‐volatile memory devices, with a potential for scale‐up manufacturing and flexible electronics applications. This article is protected by copyright. All rights reserved
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