Achieving real Ohmic contact by the dual protection of outer layer atoms and surface functionalization in 2D metal Mxenes/MoSi2N4 heterostructures

The quality of contact between a metal electrode and a two-dimensional (2D) semiconductor is simultaneously determined by the Schottky barrier height (SBH), the tunneling probability ( P TB ), and the Fermi level pinning (FLP), which also impact the performance of the device.