Quantum Dot Lasers and Amplifiers on Silicon: Recent Advances and Future Developments

A self-assembled quantum dot (QD) gain medium has multiple favorable material properties over conventional quantum well (QW) structures and bulk materials, including a large tolerance for material defects, reduced reflection sensitivity, nearly zero linewidth enhancement factor, low transparency current density, high temperature operation, and ultrafast gain dynamics useful for semiconductor mode-locked lasers and amplifiers. Here, we review the recent advances in the field of QD lasers and amplifiers with a focus on the direct growth on silicon (Si). Si photonics has found widespread application, particularly for high volume applications and for co-integration with CMOS electronics.