拓扑绝缘体
物理
凝聚态物理
绝缘体(电)
拓扑(电路)
拓扑序
联轴节(管道)
对称(几何)
量子
量子力学
材料科学
几何学
数学
光电子学
组合数学
冶金
作者
Cong Chen,Zhida Song,Jianzhou Zhao,Ziyu Chen,Zhi‐Ming Yu,Xian‐Lei Sheng,Shengyuan A. Yang
标识
DOI:10.1103/physrevlett.125.056402
摘要
We propose a universal practical approach to realize magnetic second-order topological insulator (SOTI) materials, based on properly breaking the time reversal symmetry in conventional (first-order) topological insulators. The approach works for both three dimensions (3D) and two dimensions (2D), and is particularly suitable for 2D, where it can be achieved by coupling a quantum spin Hall insulator with a magnetic substrate. Using first-principles calculations, we predict bismuthene on EuO(111) surface as the first realistic system for a two-dimensional magnetic SOTI. We explicitly demonstrate the existence of the protected corner states. Benefitting from the large spin-orbit coupling and sizable magnetic proximity effect, these corner states are located in a boundary gap ∼83 meV, and hence can be readily probed in experiment. By controlling the magnetic phase transition, a topological phase transition between a first-order TI and a SOTI can be simultaneously achieved in the system. The effect of symmetry breaking, the connection with filling anomaly, and the experimental detection are discussed.
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