1.2 kV GaN/SiC-based Hybrid High Electron Mobility Transistor with Non-destructive Breakdown

A device concept of GaN/SiC-based hybrid high electron mobility transistors (hyHEMTs) is proposed to solve destructive breakdown issue in conventional GaN devices, and it was experimentally demonstrated. A GaN-based HEMT and a SiC-based PN diode are monolithically integrated in the hyHEMT. The hyHEMTs have been fabricated on 4° off-axis 4H-SiC substrates with a diameter of 100-mm. Measured breakdown voltage was 1.27 kV with non-destructive mode breakdown characteristics.