An enhanced structure for multilevel magnetoresistive random access memory
作者
Won-Cheol Jeong,Byung-Il Lee,Seung‐Ki Joo
标识
DOI:10.1109/intmag.1999.837352
摘要
MRAM (Magnetoresistive Random Access Memory) has many advantages over conventional RAM such as nonvolatily, non-destructive readout (NDRO), and simple manufacturing process based on Si technology[1]-[3]