Effect of Doping Concentrations on Properties of Ga-Ti Co-Doped ZnO (GTZO) Targets

Ti-Ga co-doped ZnO (GTZO) ceramic targets were prepared by sintering in air at l300°C for 3 h. The morphologies, structure, densification behavior, mechanical and electrical properties of the sintered ceramic targets with different doping concentration were investigated. The optimal doping concentration was obtained. The results indicated that the sintered GTZO targets with total co-doping amount of 2wt% (1wt% Ga2O3 and 1wt% TiO2) had the best properties combination, which was corresponding to an electrical resistivity of 1.56×10-3Ω·cm, a relative density of 99%, a Vickers hardness of 378MPa and a bending strength of 99.4 MPa. The sintered targets were then used to deposit GTZO thin film by pulsed laser deposition. The electrical resistivity of the GTZO thin film achieved 3.78×10-3 Ω·cm, and the optical transmittance was above 85% in the visible light region. This kind of GTZO ceramic has a potential to be used as a high-quality sputtering target to deposit ZnO-based transparent conductive films with good optical and electrical properties.